- 您现在的位置：买卖IC网 > Sheet目录445 > IRF7807D2 (International Rectifier)MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807D2
Electrical Characteristics
Parameter
Drain-to-Source
V (BR)DSS
Min
30
Typ
Max
Units
V
Conditions
V GS = 0V, I D = 250μA
Breakdown Voltage*
Static Drain-Source
R DS (on)
17
25
m ?
V GS = 4.5V, I D = 7A ?
on Resistance*
Gate Threshold Voltage* V GS (th)
1.0
V
V DS = V GS ,I D = 250μA
Drain-Source Leakage
Current*
I DSS
90
7.2
μ A
mA
V DS = 24V, V GS = 0V
V DS = 24V, V GS = 0V,
T j = 125°C
Gate-Source Leakage
I GSS
+/- 100
nA
V GS = +/-12V
Current*
Total Gate Charge
Q gsync
10.5
14
V DS <100mV,
Synch FET*
V GS = 5V, I D = 7A
Total Gate Charge
Q gcont
12
17
V DS = 16V,
Control FET*
V GS = 5V, I D = 7A
Pre-Vth
Q gs1
2.1
V DS = 16V, I D = 7A
Gate-Source Charge
Post-Vth
Q gs2
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Q gd
2.9
Switch Charge*
Q SW
3.66
5.2
(Q gs2 + Q gd )
Output Charge*
Gate Resistance
Q oss
R g
17.6
1.2
21.6
?
V DS = 16V, V GS = 0
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
V SD
Min
Typ
Max
0.54
Units Conditions
V T j = 25°C, I s = 3A, V GS =0V ?
0.43
T j = 125°C, I s = 3A, V GS =0V ?
Reverse Recovery Time
trr
36
ns T j = 25°C, I s = 7.0A, V DS = 16V
Reverse Recovery Charge
Qrr
41
nC
di/dt = 100A/μs
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
?
?
?
?
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
2
www.irf.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRF7807VD2TRPBF
MOSFET N-CH 30V 8.3A 8-SOIC
IRF7809ATR
MOSFET N-CH 30V 14.5A 8-SOIC
IRF7811WGTRPBF
MOSFET N-CH 30V 14A 8-SOIC
IRF7834PBF
MOSFET N-CH 30V 19A 8-SOIC
IRF820STRRPBF
MOSFET N-CH 500V 2.5A D2PAK
IRF820
MOSFET N-CH 500V 2.5A TO-220AB
IRF840LPBF
MOSFET N-CH 500V 8A TO-262
IRF840STRRPBF
MOSFET N-CH 500V 8A D2PAK
相关代理商/技术参数
IRF7807D2HR
制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube
IRF7807D2PBF
功能描述:MOSFET 30V FETKY 30 VBRD 25mOhms 2.9nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7807D2PBF
制造商:International Rectifier 功能描述:MOSFET TRANSISTOR TRANSISTOR TYPE:MOSFET
IRF7807D2TRHR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
IRF7807D2TRPBF
功能描述:MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7807HR
制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube
IRF7807PBF
制造商:International Rectifier 功能描述:MOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.3A 8SOIC - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N LOGIC SO-8 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation ;RoHS Compliant: Yes
IRF7807PBF
制造商:International Rectifier 功能描述:MOSFET N 2.5W 8-SOIC